| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce light absorption at a light outputting end surface and improve optical output in a semiconductor light emitting device. SOLUTION: In a semiconductor laser element composed of a semiconductor layer 2 containing an active layer 1, an AlF3 film 4 is formed on a light outputting surface 3. Since thermal expansion coefficient of the AlF3 film 4 is larger than that of GaAs based semiconductor, tensile stress 5 is present in the film, so that compressive stress 6 can be applied to the active layer 1 in the vicinity of an end surface. Thereby compressive strain is developed in the active layer 1 in the vicinity of the end surface, and a band gap is enlarged, so that light absorption at the end surface can be restrained.</p> |
