| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device in which a variation in luminous power of a light, reflected by an electrode wiring pattern formed between adjacent island-shaped semiconductor layers, is avoided by a method wherein the island-shaped semiconductor layers are formed so as to have their cross-sections not widened in their lower end parts close to a silicon substrate and the shape of the electrode wiring pattern is improved. SOLUTION: This semiconductor light emitting device comprises a single crystal substrate, island shaped one conductivity type and reverse conductivity type semiconductor layers which are formed on the substrate so as to have the one conductivity type semiconductor layers exposed partially, electrodes connected to the one conductivity type semiconductor layers and the reverse conductivity type semiconductor layers and wirings which are provided between the adjacent one conductivity type semiconductor layers or the reverse conductivity type semiconductor layers so as to have the one conductivity type semiconductor layers or the reverse conductivity type semiconductor layers connected respectively to the same electrodes. The lower end part of the cross-section of the one conductivity type semiconductor layers in a direction of the arrangement of the island-shaped semiconductor layers is narrower than the upper end part of cross-section of the reverse conductivity type semiconductor layer.</p> |
