| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high brightness light emitting diode which has a distributed contact layer to lessen an adversary effect such as the absorption of light, by a contact layer and an interface between the contact layer and a window layer so as to be enhanced in brightness. SOLUTION: A high brightness light emitting diode having a layer of distributed contacts comprises a first electrode, a semiconductor substrate formed on the first electrode, a first conductivity-type first clad layer, an active layer formed on the first clad layer, a second conductivity-type second clad layer, a second conductivity-type window layer formed on the second clad layer, a distributed contact layer in a predetermined pattern formed on the window layer, a transparent conductive layer formed on the distributed contact layer and the window layer, and a second electrode formed on the transparent conductive layer. The transparent conductive electrode is kept in ohmic contact with the distributed contact layer, and a Schottky barrier is formed between the transparent conductive layer and the window layer.</p> |
