发明名称 FABRICATION METHOD OF OPTICALLY TRANSPARENT SUBSTRATE AND FABRICATION METHOD OF LIGHT EMITTING SEMICONDUCTOR CHIP
摘要 <p>PROBLEM TO BE SOLVED: To provide a fabrication method of an optically transparent substrate on which a semiconductor structure can be built up by epitaxial growth. SOLUTION: This fabrication method of an optically transparent substrate is such that a substrate layer (2) is built up on a substrate (1), which is subjected to lattice-matching, by epitaxial method, an optically transparent layer (3) is bonded to the substrate layer (2) on the side opposite to the substrate (1) by wafer bonding and then the lattice-matched substrate (1) is removed from the bonded unit of the substrate layer (2) and the transparent layer (3).</p>
申请公布号 JP2001244499(A) 申请公布日期 2001.09.07
申请号 JP20010045638 申请日期 2001.02.21
申请人 OSRAM OPT SEMICONDUCTORS GMBH & CO OFFENE HANDELS G 发明人 STREUBEL KLAUS
分类号 H01L21/20;H01L33/00 主分类号 H01L21/20
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