SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element in which the excessive growth of the side faces of epitaxial layers can be suppressed and a method of manufacturing the element. SOLUTION: This semiconductor element is manufactured through a first step of forming word lines 23 on a silicon substrate 20 on which field oxide films 21 are formed, a second step of respectively forming hard mask nitride films 24 and insulating film spacers 25 on the tops and sides of the word lines 23, a third step of forming the SiGe epitaxial layers 26 on the surface of the substrate 20 exposed among the spacers 25 by selective epitaxial growth, and a fourth step of forming contact plugs composed of the epitaxial layer 26 and Si epitaxial layers 27 by forming the layers 27 on the epitaxial layers 26 by selective epitaxial growth.