METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT PROVIDED WITH SILICIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method by which a semiconductor element having a silicide film can be manufactured. SOLUTION: After a contact hole is formed to expose a silicon substrate by etching an insulating film formed on the substrate, the exposed surface of the substrate is cleaned by supplying a hydrogen gas and a fluorine-based gas in the states of plasmas. Then the silicide film is formed on the surface of the substrate in the contact hole and, after the surface of the silicide film is cleaned by again supplying the hydrogen gas and fluorine-based gas in the states of plasmas, the contact hole in which the silicide film is formed is filled up with a metallic film. The cleaning of the surface of the silicon substrate is made through a step of forming a reaction layer by causing a chemical reaction between the supplied hydrogen gas and fluorine-based gas and an oxide film formed on the exposed surface of the substrate, and another step of annealing the reaction layer so as to remove the layer by vaporization.