发明名称 |
INTERLEAVE TYPE MEMORY DEVICE FOR BURST TYPE ACCESS IN SYNCHRONOUS READING MODE IN TWO HALF-ARRAY BEING INDEPENDENTLY READABLE IN RANDOM ACCESS ASYNCHRONOUS MODE |
摘要 |
PROBLEM TO BE SOLVED: To provide a multi-purpose memory device suitable for an application example of a wider range independently of whether reading of data is required or not in the asynchronous mode (as in standard memory) in random access or in a synchronous progressive mode in burst type access. SOLUTION: A memory device recognizes modes of access and reading required by a microprocessor, also enables performing self-conditioning of its internal circuit based on such a recognition to perform reading data in a required mode. At the time, an additional external control signal is not required, and sacrifice is not forced in an access time and a reading time as compared with obtained one in the case of a memory device constituted specifically for any one of operation modes for constitution of the same manufacturing technology and conventional technology.
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申请公布号 |
JP2001243778(A) |
申请公布日期 |
2001.09.07 |
申请号 |
JP20010022134 |
申请日期 |
2001.01.30 |
申请人 |
STMICROELECTRONICS SRL |
发明人 |
CAMPANALE FABRIZIO;TOMAIUOLO FRANCESCO;NICOSIA SALVATORE;DE AMBROGGI LUCA GIUSEPPE;KUMAR PROMOD;PASCUCCI LUIGI |
分类号 |
G11C11/41;G11C7/10;G11C7/22;G11C8/04;G11C8/18;G11C11/413;(IPC1-7):G11C11/41 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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