发明名称 SEMICONDUCTOR INTEGRATED MEMORY
摘要 PROBLEM TO BE SOLVED: To minimize a required area for a circuit device and to increase comparatively switching speed of a signal characteristics of a data signal to be read out, in a semiconductor integrated memory having the circuit device reading out the data signal. SOLUTION: This memory has memory cells storing the data signal, a sense amplifier, a driver circuit connected to an output side of the sense amplifier, a signal line path connected to an output side of the driver circuit, a pre-charge circuit connected to this signal line path, a memory circuit connected to the signal line path, and a control signal terminal connected to the sense amplifier, the pre-charge circuit, and the memory circuit, and the driver circuit can be activated or can be deactivated by only the output signal of the sense amplifier.
申请公布号 JP2001243775(A) 申请公布日期 2001.09.07
申请号 JP20010027358 申请日期 2001.02.02
申请人 INFINEON TECHNOLOGIES AG 发明人 JOHNSON BRET;KAISER ROBERT
分类号 G11C11/409;G11C7/10;G11C7/12;G11C11/407;(IPC1-7):G11C11/409 主分类号 G11C11/409
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