SELECTIVE ERASURE OF A NON-VOLATILE MEMORY CELL OF A FLASH MEMORY DEVICE

摘要

A method of selectively erasing a bit of an individual memory cell of an array of non-volatile memory cells by providing an array of non-volatile memory cells that include a first non-volatile two bit memory cell (10A) that is connected in series with a second non-volatile memory cell (10B). The method includes erasing a first bit of the first non-volatile two bit memory cell (10A) while not erasing a second bit of the first non-volatile memory cell (10A).