| 摘要 |
PURPOSE: To provide an apparatus for surface treatment capable of enhancing the selection ratio or the ratio of the etching rate of an antireflection film, such as BARC or the like of an organic material, which serves as a means for forming a highly precise pattern by surface treatment of a semiconductor or the like to that of a resist which servers as a mask for forming the pattern. CONSTITUTION: In an apparatus for surface treatment which uses a plasma, a depositing gas is added to hydrogen of a light element to constitute the etching gas. The ions accelerated by a bias power source promote the etching reaction. Use of hydrogen of a light element to the etching gas reduces sputtering of the shoulders of the mask, and mixing of the depositing gas to the additional gas can enhance the selection ratio against the mask material.
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