发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a flat panel display having high functions. SOLUTION: A system comprising an active matrix-type display mounted with a CPU and memories is formed of thin-film transistors. A crystalline silicon film used for the thin-film transistors is crystallized through a manner, in which amorphous silicon in which an element such as nickel that promotes the crystallization of amorphous silicon is introduced is crystallized through a thermal treatment carried out at temperatures of 450 deg.C to 650 deg.C, and a thermal treatment of higher temperature (RTA) is carried out to improve crystalline silicon film in crystallinity.</p> |
申请公布号 |
JP2001244198(A) |
申请公布日期 |
2001.09.07 |
申请号 |
JP20010009652 |
申请日期 |
2001.01.18 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MIYANAGA SHOJI;OTANI HISASHI;TAKEMURA YASUHIKO |
分类号 |
G02F1/1368;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20;G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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