发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a flat panel display having high functions. SOLUTION: A system comprising an active matrix-type display mounted with a CPU and memories is formed of thin-film transistors. A crystalline silicon film used for the thin-film transistors is crystallized through a manner, in which amorphous silicon in which an element such as nickel that promotes the crystallization of amorphous silicon is introduced is crystallized through a thermal treatment carried out at temperatures of 450 deg.C to 650 deg.C, and a thermal treatment of higher temperature (RTA) is carried out to improve crystalline silicon film in crystallinity.</p>
申请公布号 JP2001244198(A) 申请公布日期 2001.09.07
申请号 JP20010009652 申请日期 2001.01.18
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MIYANAGA SHOJI;OTANI HISASHI;TAKEMURA YASUHIKO
分类号 G02F1/1368;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20;G02F1/136 主分类号 G02F1/1368
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