| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device of novel structure. SOLUTION: The semiconductor device includes a thin film transistor using a semiconductor film on an insulator. The semiconductor film uses nickel to facilitate crystallization. The side face of the semiconductor film is in contact with the oxide in the semiconductor film, and the film thickness of the oxide is greater than the film thickness of the semiconductor film.</p> |
| 申请公布号 |
JP2001244474(A) |
申请公布日期 |
2001.09.07 |
| 申请号 |
JP20010004208 |
申请日期 |
2001.01.11 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TAKEMURA YASUHIKO;ADACHI HIROKI |
| 分类号 |
G02F1/1368;H01L21/20;H01L21/336;H01L21/762;H01L21/8238;H01L27/092;H01L29/786;(IPC1-7):H01L29/786;H01L21/823;G02F1/136 |
主分类号 |
G02F1/1368 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
