LATERAL JUNCTION FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a lateral JFET which is manufactured easily as a high power semiconductor switching element excellent in high breakdown strength and high speed. SOLUTION: The lateral junction field-effect transistor is provided with an SiC substrate 1. The transistor is provided with a p-type SiC film 2. The transistor is provided with an n-type SiC film 3 which is formed on the p-type SiC film. The transistor is provided with a channel region 21 whose film thickness is formed thin in the n-type SiC film. The transistor is provided with a source region 22 and a drain region 23 which are separated in the upper part on both sides of the channel region. The transistor is provided with a gate electrode 14 which is formed in a p-type region. The channel region contains n-type impurities whose concentration is higher than the concentration of impurities in parts of the n-type SiC film on both sides of it.