| 摘要 |
PURPOSE: To obtain a high voltage generator circuit the ripple width of which is improved, without increasing the area of a speedup capacitor C1. CONSTITUTION: The semiconductor integrated circuit has a high voltage generator circuit composed of a booster circuit 1 which provides a high voltage output with the input of a boosting clock and a control signal, first and second voltage dividing resistors R1, R2 for dividing the output voltage of the booster circuit, and a comparator 2 for comparing the division voltage divided by the dividing resistors R1, R2 with a reference voltage to output a control signal. A parasitic capacitance C1 of the dividing resistor R1 is connected to a high voltage output line, and this capacitance is directly connected to a connection line of the division voltage to be the input to the comparator and hence functions as a speedup capacitor.
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