发明名称 |
ION SOURCE AND ITS OPERATING METHOD |
摘要 |
PURPOSE: To enhance the rate of the molecular ion extracted from the ion source in the ion beam. CONSTITUTION: The ion source is designed to satisfy the relation L < 3.37 B-1 radic(VA)x10-6 where the arc voltage impressed between the plasma-generating receptacle 2 and the filament 8 is VA £V|, the magnetic flux density of the magnetic field 19 inside the plasma-generating receptacle 2 is B £T| and where the least smallest distance from the most abundant electron-emitting point 9 around the center of the heat of the filament 8 to the wall face of plasma generating receptacle 2 is set to L £m|.
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申请公布号 |
KR20010085391(A) |
申请公布日期 |
2001.09.07 |
申请号 |
KR20010007400 |
申请日期 |
2001.02.15 |
申请人 |
NISSIN ELECTRIC CO., LTD. |
发明人 |
YAMASHITA TAKATOSHI |
分类号 |
H01J27/04;H01J27/08;H01J37/08;(IPC1-7):H01J27/08 |
主分类号 |
H01J27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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