| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element, in which a cell region is formed as a shallow junctional region by forming a single crystal silicon in a selective epitaxial growth method, and a deep junction region with a uniform depth is formed at the surrounding region in an ion implantation step. SOLUTION: This is referred to a manufacturing method including the first to eleventh steps as described in the clam item 1. |
