摘要 |
<p>PROBLEM TO BE SOLVED: To use not only low voltage but high voltage even for a word line drive of low voltage specifications without any trouble with respect to a flash memory. SOLUTION: A level shifter 31 and a driver 32 of a word line driver 30 are constituted of MOS transistors having low sustaining voltage, and a voltage control circuit 40 for controlling driver power source voltage VPP is arranged. The voltage control circuit 40 holds VPP at a voltage VL being lower than the sustaining voltage when a logic state of the MOS transistor is varied, after a logic state of the MOS transistor is varied, the circuit 40 ramps up VPP to voltage HV being higher than the sustaining voltage from the low voltage LV. Also, before a logic state of the MOS transistor is varied, the voltage control circuit 40 ramps down VPP to the low voltage LV from the high voltage HV.</p> |