发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To use not only low voltage but high voltage even for a word line drive of low voltage specifications without any trouble with respect to a flash memory. SOLUTION: A level shifter 31 and a driver 32 of a word line driver 30 are constituted of MOS transistors having low sustaining voltage, and a voltage control circuit 40 for controlling driver power source voltage VPP is arranged. The voltage control circuit 40 holds VPP at a voltage VL being lower than the sustaining voltage when a logic state of the MOS transistor is varied, after a logic state of the MOS transistor is varied, the circuit 40 ramps up VPP to voltage HV being higher than the sustaining voltage from the low voltage LV. Also, before a logic state of the MOS transistor is varied, the voltage control circuit 40 ramps down VPP to the low voltage LV from the high voltage HV.</p>
申请公布号 JP2001243786(A) 申请公布日期 2001.09.07
申请号 JP20000055106 申请日期 2000.03.01
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KOJIMA MAKOTO
分类号 G11C16/06;G11C8/08;G11C16/08;G11C16/12;H01L21/822;H01L27/04;(IPC1-7):G11C16/06 主分类号 G11C16/06
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