发明名称 METHOD AND APPARATUS FOR MEASURING THE TEMPERATURE OF A SEMICONDUCTOR SUBSTRATE BY MEANS OF A RESONANT CIRCUIT
摘要 A substrate temperature measuring method, a substrate processing method, substrate temperature measuring equipment and semiconductor manufacturing equipment that can measure more accurately a temperature of and can process more precisely a substrate than in existing ones are provided. Electric energy is converted into electromagnetic wave energy, an electromagnetic wave involving the converted electromagnetic wave energy being irradiated on a resonant circuit disposed on a substrate. A voltage or a current involving electric energy is detected to detect a resonance frequency of a resonant circuit. From the detected resonance frequency, a temperature of a substrate is obtained. Thereby, by making use of at least one resonant circuit disposed on a substrate, a temperature of the substrate can be measured with high precision.
申请公布号 WO0165224(A1) 申请公布日期 2001.09.07
申请号 WO2001JP00564 申请日期 2001.01.29
申请人 TOKYO ELECTRON LIMITED;KOSHIMIZU, CHISHIO 发明人 KOSHIMIZU, CHISHIO
分类号 G01K7/00;G01K7/32;H01L21/205;H01L21/302;H01L21/3065;H01L21/822;H01L27/04;(IPC1-7):G01K7/32 主分类号 G01K7/00
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