| 摘要 |
PURPOSE: To provide a manufacturing method of semiconductor light emitting devices by which the device provided with a window structure can be obtained easily without requiring a high-level of processing technique. CONSTITUTION: This manufacturing method is for the semiconductor devices constituted by arranging semiconductor light emitting elements on a substrate 1. By patterning a first multilayered film 16 deposited on a substrate 1, a groove pattern P is formed, which is provided with a wide width part W1 having a wider opening width compared with that of each narrow width part W2 on both sides of the part W1. While covering the groove patterns P, a second multilayered film 26 is formed by epitaxial growth, in which an N-type second lower clad layer 22, a second active layer 23, a P-type second upper clad layer 24 and a P-type cap layer 45 are laminated in order. By patterning the cap layer 45, a current injection layer 25a is laid on the second multilayered film 46 in the groove pattern P and extended along the longitudinal direction of the groove pattern P.
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