METHOD FOR DEVELOPING, METHOD FOR FORMING PATTERN, AND METHOD FOR FABRICATING PHOTOMASK OR SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for developing, a method for forming pattern, and a method for fabricating a photomask or a semiconductor device using the same are provided to develop process using a developer wherein an excellent resist pattern can be formed uniformly on a substrate surface. CONSTITUTION: The developing process using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an alpha -methyl styrene compound and an alpha -chloroacrylate ester compound as a base resin. Here, the developer consists essentially of one organic solvent selected from the group consisting of propyleneglycol monomethylether acetate, 2-pentanone and ethyl-3-ethoxypropionate.