| 摘要 |
PROBLEM TO BE SOLVED: To provide a high efficiency, a high NA and short WD lens loadable optical semiconductor device increasingly required according to a high speed of optical communication. SOLUTION: This optical semiconductor device is provided with a silicon substrate 15 having a V shaped first groove part 15b formed by etching on an upper surface part 15a, a light emitting element 11 having its optical axis in the direction of the first groove part 15b and fitted to the upper surface part 15a and an aspheric lens 23 fitted to the first groove part 15b, and the first groove part 15b is constituted of first, second slopes 15e, 15f opposite to each other, and a third slope 15g crossing at right angles with the first, second slopes 15e, 15f, and a slit 15k notched containing the first to the third slopes 15e-15g is formed on the silicon substrate 15 in the direction orthogonal to the direction of the first groove part 15b, and the aspheric lens 23 is fitted to the first and second slopes 15e, 15f in the state of projecting its part into the slit 15k, and the light emitting element 11 is made optical communication possible through the aspheric lens 23. |
