SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce the manufacturing cost of a CSP semiconductor device of a wafer level and increase the reliability by securing enough strength from a re-wiring to a post to an external terminal. SOLUTION: An adhered layer 15, Cu seed layer 16, and re-wiring layer 18 formed by a Cu plating method are formed through a protective insulation film 13 and polyimide layer 14, both of which have an opening in a pad 12 region of a final wiring. In a specified area on the re-wiring layer 18, a first metal ball formed of a high temperature solder is mounted and welded to form a globular post 20. On an exposed head of the post surrounded by sealing resin 21 has its upper face polished and a side face arched, a second metal ball formed of solder is mounted and welded to form the external terminal 22.