METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that has a self-aligned contact and a highly reliable hyperfine transistor disposed thereon. SOLUTION: A gate oxide film 103, a gate electrode 107 and a gate-top insulating film 108 are formed on a silicon substrate 101. A nitride film sidewall 110 is formed on side surfaces of the gate electrode and the gate-top insulating film via a pad film 109 composed of a thin oxide film. Ion implantation is performed to form a high-concentration diffusion layer 118 while the nitride film sidewall 110 is provided. Then, the nitride film sidewall is selectively removed and an etch stopper film 113 and an interlayer insulating film 116 are formed on the substrate. Subsequently, a self-aligned contact hole 120 that penetrates through the interlayer insulating film and the etch stopper film and reaches the high-concentration diffusion layer 118 is opened. A wide gap between the gate electrodes is secured while the self-aligned contact is smoothly formed.