METHOD FOR MANUFACTURING SELF-ALIGNED VERTICAL BIPOLAR TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a self-aligned vertical bipolar transistor. SOLUTION: The method for manufacturing the bipolar transistor comprises a process in which a base region 8 having an extrinsic base 800 and an intrinsic base is formed. The method comprises a process which forms an emitter region comprising an emitter block having a comparatively narrow lower part arranged in an emitter window formed above the intrinsic base. When the extrinsic base is formed, the implantation of impurities is executed so as to be self-aligned with respect to the emitter window, by being separated by a predetermined distance from the boundary in the lateral direction of the emitter window on both sides of the emitter window after the emitter window is prescribed and before the emitter block is formed.