发明名称 PHENOL NOVOLAK RESIN AND POSITIVE-TYPE PHOTORESIST COMPOSITION USING THE SAME
摘要 PURPOSE: Provided are a phenol novolak resin forming excellent fine overcrowded or isolated pattern, and excellent in sensitivity, resolution and focal depth-width property, and a positive-type photoresist composition. CONSTITUTION: The phenol novolak resin is characterized in that: strength ratios of o-o/o-p/p-p peaks determined by 13C-NMR measurement are 5.0-8.5/2.5-4.5/1, respectively, and the resin has a phenolic constituting unit represented by the following formulae (1) to (4) and a molecular weight of 3,000-20,000.
申请公布号 KR20010085611(A) 申请公布日期 2001.09.07
申请号 KR20010009714 申请日期 2001.02.26
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 DOI KOUSUKE;HIRATA ATSUKO;KOHARA HIDEKATSU;MIYAGI KEN;NAKAYAMA TOSHIMASA;OHUCHI YASUHIDE
分类号 C08G8/10;C08G14/04;G03F7/023;(IPC1-7):C08G8/10 主分类号 C08G8/10
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