GAS WASHING METHOD OF SEMICONDUCTOR SUBSTRATE SURFACE

摘要

PROBLEM TO BE SOLVED: To prepare reliable semiconductor devices by a gas washing method of a semiconductor substrate surface by carrying out ozone exposure accompanying ultraviolet-ray irradiation under reduced pressure, and by effectively removing carbon impurities on the semiconductor substrate surface. SOLUTION: In the substrate pretreatment washing process when semiconductor devices are prepared, a substrate temperature is maintained from the room temperature to 1200 deg.C, and ultraviolet rays are applied onto the substrate surface for carrying out ozone exposure.