| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam lithography system and a method, where influence of lens aberration can be removed, a larger deflection region can be ensured through a simple structure, dispensing with a pre-auxiliary deflector, and a drawn pattern can be kept high in resolution. SOLUTION: An electro-optical system comprises a primary deflection object lens (25), which reduces, deflects, and projects an electron beam onto a sample (13), a pre-main deflector (29) which controls and deflects the electron beam so as to reduce aberration in the above primary deflection object lens (25), and an auxiliary deflector 28 which adjusts the electron beam in deflection. The main deflector (29), the main deflection object lens (25), and the auxiliary deflector (28) are arranged in this sequence from the upper side of the electron beam, and the auxiliary deflector (28) is provided outside of the lens field of the main deflection main object lens (25).
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