| 摘要 |
PURPOSE: To prevent cloudiness of the reflector of a lamp annealing apparatus, stabilize a temperature of heat treatment, and prevent oxidation of the surface of a semiconductor wafer. CONSTITUTION: The lamp annealing apparatus has a heating lamp unit 1 at an upper part of a chamber, and a reflector 7a which stabilizes the temperature at a lower part of the chamber. The apparatus, which makes a process gas flow on the element forming surface on the face of a semiconductor wafer 2 which is loaded and rotated on a rotary cylinder 4 in the chamber 10, and makes a gas for preventing cloudiness of the reflector 7a flow on the silicon surface on the rear of the semiconductor wafer 2, is provided with mass-flow controllers 15a to 15d which dilute the gas which is made to flow on the rear of the semiconductor wafer 2 so that the gas may become the one with a mixing ratio desired. Also, the gas which is made to flow on the rear of the semiconductor wafer 2 is exhausted after travelling through the peripheral surface of the reflector 7a.
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