POSITIVE TYPE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY

摘要

PROBLEM TO BE SOLVED: To provide a positive type photoresist composition for exposure with far UV having high resolving power and good suitability to a halftone phase contrast shift mask (side lobe light resistance). SOLUTION: The positive type photoresist composition contains (A) a compound which generates an acid when irradiated with active light or radiation, (B-1) a polymer having at least one selected from the group of repeating units represented by 1st and 2nd specified structures, repeating units with a 3rd specified structure and a group which is decomposed by the action of the acid and (B-2) a polymer having repeating units with a 4th specified structure and a group which is decomposed by the action of the acid.