| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize a laser processing method, which is capable of restraining semiconductor devices formed through a laser annealing process from varying in characteristics and making a semiconductor film of large area undergo laser processing with high throughput. SOLUTION: A laser processing method is carried out in a manner, in which a substrate on which a first element forming region and a second element forming region that are separate from each other is irradiated with a laser beam which is long in the widthwise direction of the substrate. The substrate is moved in its lengthwise direction to enable the laser beam to make a first scan on its surface. After the first scan is finished, the substrate is moved in its widthwise direction, and then moved in the direction opposite to the above lengthwise direction to enable the laser beam to make a second scan on its surface. The length of the laser beam is shorter than the width of the substrate but longer than the width of the element-forming region, so that all the first element-forming region is scanned by the first scan, and all the second element- forming region by the second scan.</p> |
