| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin-film transistor liquid crystal display device, which improves adhesion of a gate conductive film and a gate insulating film, and prevents peeling of the gate insulating film and the gate conductive film, at high-temperature heat treatment, laser annealing, or lamp annealing times. SOLUTION: A polysilicon thin-film transistor, composed including a polysilicon thin film 3, the gate insulating film 4 formed on the polysilicon thin film, and gate conductive film 5 formed on the gate insulating film, is equipped on a glass substrate 1. The gate insulating film has a surface reduction layer 4b on its surface, and the gate conductive film is appressed formed on the surface reduction layer. In the manufacturing method, after performing film forming of the gate insulation film, by conducting hydrogen plasma treatment or reverse sputtering by hydrogen ion, the hydrogenation reduction is conducted to the surface layer of the gate insulating film, and the gate conductive film is formed on the surface layer.</p> |
