| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of transposition with the same transposition area as the wafer size, low defective density, and flatness suited even in sub- micro meter order thickness and LSI standard with respect to the same kind of or different kinds of substrates. SOLUTION: At first, an ion implantation process is carried out to form an ion separation layer 20. In a wafer bonding method, a required substrate 14 is bounded with a feed substrate 10 to form a bonding structure. In high energy ion activation 24, the implanted ion is bubbled minutely and a crack is filled with it. As a result, the thin film 20 is separated and transposed to the required substrate 14. In addition, a cooling unit 26 for absorbing heat from the high energy ion activation 24 is provided, and damage caused by a difference in coefficient of thermal expansion as the different kinds of materials in the bonded structure can be prevented.
|
