| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a dielectric thin film which enhances a residual dielectric polarization. SOLUTION: In the formation method for the dielectric thin film which is formed on a substrate layer 4 after the substrate layer 4 is laminated on an SiO2 layer 2, the SiO2 layer 2 is formed by using a mixed gas of tetraethoxysilane and O2 by a plasma CVD method and by setting a gas pressure at 0.4 Torr or less. |
