| 摘要 |
PROBLEM TO BE SOLVED: To easily obtain satisfactory interface in SrTiO3 whose concentration of a carrier is comparatively high and which is made into semiconductor, and to realize a semiconductor element superior in Schottky connection and interface control by an oxide semiconductor. SOLUTION: An oxide semiconductor is annealed in oxygen at 1000 deg.C and it is cleaned by using acid in a nitrogen atmosphere. Thus, a substance causing an interface level is removed and an electrically clean surface is obtained. |
