| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor light emitting element such as a red semiconductor laser element and a light emitting diode wherein the threshold current value is reduced, the high characteristic temperature is ensured and high output and stable operation are obtained in a wavelength band of 630-660 nm. SOLUTION: In a semiconductor light emitting element which has optical guide layers 5, 7 and clad layers 4, 8 above and below an active layer 6 and is composed of AlGaInP based material or AlGaInAsP based material wherein lattice constants of the clad layers and the optical guide layers become a value between lattice constants of GaAs and GaP, the clad layers 4, 8 and the optical guide layers 5, 7 have indirect transition region compositions. One or both of the optical guide layers 5, 7 are doped with impurities to have the same conductivity type (N-type or P-type) as the adjacent clad layers 4, 8. |
