| 摘要 |
PROBLEM TO BE SOLVED: To provide a III-V group compound semiconductor wafer wherein an electron supply layer is made of InGaP and which can realize generation of a two-dimensional electron gas of a high mobility and high concentration and reduction of element resistance. SOLUTION: The double hetero type HEMT semiconductor wafer includes a GaAs buffer layer 2, a first electron supply layer 3, an AlGaAs spacer layer 4, an InGaAs channel layer 5, an InGaP spacer layer 13, a second electron supply layer 12 and a GaAs cap layer 8, which are sequentially formed on a semi-insulating GaAs substrate 1. The first electron supply layer 3 is made of AlGaAs and the second electron supply layer 12 is made of InGaP.
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