METHOD FOR FORMING SELF-ALIGNED CONTACT STRUCTURE

摘要

PURPOSE: A method for forming a self-aligned contact structure is provided to prevent a short-circuit between a gate electrode and a contact pad by reducing a damage of a gate pattern. CONSTITUTION: A gate electrode(202), a gate nitride layer(204), and a gate mask layer(206) are formed on a semiconductor substrate(200). A gate pattern(208) is formed by patterning the gate mask layer(206), the gate nitride layer(204), and the gate electrode(202). A gate spacer(210) is formed at a sidewall of the gate pattern(208). An interlayer dielectric(212) is formed on the whole surface of the semiconductor substrate(200). An upper surface of the gate pattern is exposed by etching and flattening the interlayer dielectric(212). A groove is formed by etching the interlayer dielectric(212) between the gate patterns(208). A contact pad(216) is formed by filling a conductive layer into the groove.