| 摘要 |
Sidewall spacers comprised of a second polycrystalline silicon film are formed on the sides of a first polycrystalline silicon film in such a way that a relationship of b<=a=x<c/2 is satisfied where x is the thickness of the sidewall spacers, a is a distance from the surface of the first insulating film to the surface of the first polycrystalline silicon film, b is the thickness of the second polycrystalline silicon film at a time of formation thereof and c is a distance between adjoining first polycrystalline silicon films.
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