METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of enhancing the alignment between a photoresist layer pattern of a sub chuck and a main chuck without being affected by a flow process of a photoresist layer. CONSTITUTION: First, a lower interlayer insulating layer(11) is formed on a semiconductor layer(10), and then a photoresist layer pattern of which an aperture is arranged on a defined area is formed thereon. Then, an etching hole of the lower interlayer insulating layer corresponding to the aperture is formed as a main chuck using the photoresist layer pattern. Next, an upper interlayer insulating layer(15) is formed on the semiconductor layer(10) and the lower interlayer insulating layer(11) within the etching hole. Finally, a photoresist layer pattern(19) of trench type having an aperture(18) overlapped with the etching hole is formed on the upper interlayer insulating layer(15) as a sub chuck.