METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to separate nodes between cells by oxidizing a silicide layer. CONSTITUTION: The first oxide layer(201) is deposited on a semiconductor substrate including a cell transistor. A contact hole is formed by etching selectively the first oxide layer(201). A plug layer and a barrier layer are laminated and buried into the contact hole. The second oxide layer(203) and a polysilicon layer are formed on the whole surface of the structure. A trench is formed by etching selectively the polysilicon layer and the second oxide layer(203). A lower electrode(205) and a silicide layer are formed on a whole surface of the trench. A silicide oxide layer(207) is formed by oxidizing the silicide layer. A high dielectric layer(208) and an upper electrode(209) are deposited on the whole surface of the structure.