METHOD FOR MANUFACTURING TIP FOR USE OF NEAR FIELD OPTICAL SENSOR

摘要

PURPOSE: A method is provided, in which the metallic film formed at an end of the tip is finely removed while the inert gas ion generated by a collision ionization accelerates toward the tip, to thereby form a sub-wavelength aperture in an easy manner. CONSTITUTION: A method comprises the step(a) of forming SiO2 films(14,16) at an upper surface and a lower surface of a silicon wafer(12), respectively, an Si3N4 film(18) at the surface of the SiO2 film formed at the lower surface of the silicon wafer, and a tip with a protruded portion(20) onto the silicon wafer through a reactive ion etching method; the step(b) of forming an SiO2 film(22) for sharpening the protruded portion of the silicon wafer, removing the SiO2 film(22), and washing the resultant structure; the step(c) of depositing an Si3N4 film(24) and a metallic film(26) in sequence; the step(d) of slightly removing the metallic film at the apex of the protruded portion; and the step(e) of etching the silicon wafer. The removal of the metallic film described in the step(d) is performed in such a manner that an anode voltage is applied to an end of the tip under the atmosphere of an inert gas such as argon or neon, and a sputtering process is executed.