| 摘要 |
PURPOSE: A rapid thermal process system is provided to prevent a damage of a wafer and the diffusion of a dopant by applying a process temperature only on a surface of a wafer. CONSTITUTION: A light emission portion(22) is installed at an upper portion of a chamber(21). A multitude of lamp(25) is installed at the light emission portion(22) in order to provide heat. Each lamp(25) emits infrared rays to a lower face of the chamber(21). A lens portion(23) is installed at a lower portion of the light emission portion(22) in order to concentrate the infrared rays. The lens portion(23) is formed with the first and the second lens(23-1,23-2). A control bar(28) is installed between the first and the second lens(23-1,23-2). The control bar(28) is fixed by a fixing plate(27). An inner wall of the chamber(21) is surrounded by a process tube(29). A transmission window(30) is formed at a predetermined position of the process tube(29). The infrared rays are irradiated to a wafer(26) through the transmission window(30). A light receiving portion(24) is installed at the lower portion of the chamber(21). The light receiving portion(24) is formed with a drive portion(31), a wafer fixing chuck(32), and a thermal sensor(34). The receiving portion(24) is controlled by a control portion(37).
|
