| 摘要 |
PURPOSE: A manufacturing method of a high-voltage transistor is to increase resistance of an LDD(lightly doped drain) region, thereby minimizing a hot carrier effect, even when the transistor operates at a high voltage. CONSTITUTION: A gate oxide(13), a polysilicon layer(14), a WSi2 layer(15) and a capping insulating layer(16) are formed on a semiconductor substrate(11) in this order, and patterned to form a gate thereon. A buffer oxide is deposited on the entire surface of the substrate, followed by depositing a nitride layer on the buffer oxide and selectively etching it to form the first gate sidewall. Thereafter, the capping insulating layer and the buffer oxide on the substrate are eliminated. The first gate sidewall is etched off and then lightly doped impurity ions are implanted into the substrate using the gate as a mask to form an LDD region(19). After the remaining buffer oxide is removed, a nitride layer is deposited on the entire surface and selectively etched to form the second gate sidewall(20). Highly doped impurity ions are then implanted into the LDD region which is not masked by the second gate sidewall to form a source/drain region(21) in the substrate.
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