| 摘要 |
PURPOSE: A polymer having at least one pericyclic protective group for formation of an ultrafine pattern in a lithography for manufacture of a semiconductor element and a photoresist composition containing the polymer are provided. Therefore, the photoresist composition generates no problems such as the proximity effect and edge roughness. CONSTITUTION: A novel polymer has at least one pericyclic protective group having a formula selected from (I), (II), (III), (IV) and (V). The resist composition containing the novel polymer can be used as a chemically reinforced resist in ArF(193 nm) light sources and makes it possible to form an ultrafine pattern of a 0.1nm pitch successfully. |
