METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to obtain a margin for preventing misalignment in a photo-etching process for a pad and a contact that enlarges an upper area of the pad. CONSTITUTION: A gate electrode(15) is formed on an active region of a silicon substrate(1). An insulating layer for a spacer(41) is deposited on the silicon substrate(10). An interlayer dielectric(50) is deposited on the insulating layer. The interlayer dielectric(50) of the active region is selectively etched to expose the insulating layer by using the insulating layer as an etch-stop layer(19). By an anisotropic dry-etching process of the exposured insulating layer, the spacer(41) is formed on a sidewall of the gate electrode(15) and the surface of the active region is exposed respectively. Each pad(60) is formed on the exposed surface of the active region.