| 摘要 |
Disclosed is a simplified technique of introducing a metal element capable of promoting the crystallization of silicon into an amorphous silicon film to be crystallized, and of removing the metal element from the film. An amorphous silicon film 102 is formed on a substrate, a mask 103 is formed thereon, and a nickel-containing PSG film is further formed thereover. This is heated at 560° C. to thereby make nickel diffused in the direction 106, and the film is crystallized. Next, this is further heated at 850° C. to thereby make phosphorus diffused into the region 107, in which nickel is gettered by the thus-diffused phosphorus. Thus, the crystallization of silicon is promoted by the metal element nickel, and the nickel is then removed from the crystallized silicon film.
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