发明名称 |
Semiconductor device and process for producing the same |
摘要 |
An interlayer insulation film containing a dielectric component represented by a chemical formula having a Si-H bond or a Si-CH3 bond is formed on a substrate. Next, a photoresist is formed on the interlayer insulation film. The photoresist is then formed into a form of a contact hole. Thereafter, dry-etching of the interlayer insulation film is conducted by use of the photoresist as a mask. Subsequently, the photoresist is removed, and the interlayer insulation film is exposed to nitrogen plasma and hydrogen plasma, for example.
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申请公布号 |
US2001019857(A1) |
申请公布日期 |
2001.09.06 |
申请号 |
US20010770114 |
申请日期 |
2001.01.23 |
申请人 |
YOKOYAMA TAKASHI;USAMI TATSUYA |
发明人 |
YOKOYAMA TAKASHI;USAMI TATSUYA |
分类号 |
H01L21/31;H01L21/312;H01L21/316;H01L21/318;H01L21/60;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/335 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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