IC SEMICONDUCTOR DEVICE WITH GATE INSULATING LAYER INCLUDING ALUMINIUM OXIDE LAYER AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: An IC semiconductor device with a gate insulating layer including an aluminium oxide layer and a method for manufacturing the same are provided to prevent a silicon fitting phenomenon and a field recess phenomenon by forming sequentially a gate insulating layer and a gate electrode on a substrate. CONSTITUTION: A field region(43) and an active region are defined on a semiconductor substrate(41). A silicon oxide layer(45), an aluminium oxide layer(47), and a gate insulating layer(57) are formed on the semiconductor substrate(41). A thickness of the aluminium oxide layer is 5 to 10 angstrom. A gate electrode(49a) is formed on the gate insulating layer(57). The gate electrode(49a) is formed by a doped polysilicon layer. A source/drain region is formed on a surface of the semiconductor substrate(41).