发明名称 |
Method for forming an inter-metal dielectric layer |
摘要 |
A method for forming an inter-metal dielectric layer without voids therein is described. Wiring lines are formed on a provided substrate. Each of the wiring lines comprises a protective layer thereon. A liner layer is formed over the substrate and over the wiring lines. An FSG layer is formed on the liner layer by using HDPCVD. A thickness of the FSG layer is about 0.9-1 times a thickness of the wiring lines. A cap layer is formed on the FSG layer using HDPCVD. A thickness of the cap layer is about 0.2-0.3 times a thickness of the wiring lines. An oxide layer is formed on the cap layer to achieve a predetermined thickness. A part of the dielectric layer is removed to obtain a planarized surface.
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申请公布号 |
US2001019883(A1) |
申请公布日期 |
2001.09.06 |
申请号 |
US20010790945 |
申请日期 |
2001.02.22 |
申请人 |
LIU CHIH-CHIEN;TSAI CHENG-YUAN;HSIEH WEN-YI;LUR WATER |
发明人 |
LIU CHIH-CHIEN;TSAI CHENG-YUAN;HSIEH WEN-YI;LUR WATER |
分类号 |
H01L21/3105;H01L21/316;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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