METHOD FOR FORMING ALUMINUM OXIDE FILM USING ATOMIC LAYER DEPOSITION

摘要

PURPOSE: A method for forming an aluminum oxide film that can reduce impurities inside oxide film is provided, which is characterized in that an aluminum source consisting of DAMCl£Di-Methyl-Aluminum-Chloride (10): Al(CH3)2Cl|is introduced into a reaction chamber leading to chemical/physical adsorption before an oxygen source that is subject to undergo chemical exchange with the aluminum source is introduced into the reaction chamber to consequently form an aluminum oxide film on the surface of a semiconductor substrate. CONSTITUTION: The method for forming an aluminum oxide film using atomic layer deposition comprises the steps of chemically and physically adsorbing the aluminum source on a semiconductor substrate by infusing an aluminum source consisting of DAMCl£Di-Methyl-Aluminum-Chloride (10): Al(CH3)2Cl|into a reaction chamber; and chemically reducing the aluminum source and oxygen source by infusing an oxygen source consisting of ozone onto the chemically and physically aluminum source deposited semiconductor substrate (20), wherein the infusion of the aluminum source and oxygen source is performed at a temperature of 150 to 650 deg.C, and the method comprises the step of purging the reaction chamber with an inert gas (15) after the step of infusing the aluminum source.